Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices

Moir\'e superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics which the number electrons per effective atom can be tuned at will. We report on an exact diagonalization study electronic properties half-filled narrow moir\'e bands correlation strengths are varied by changing twist angles or interaction strengths. construct phase diagram for bilayer, identifying where metal-insulator transition occurs, estimating sizes charge gaps insulating phase, and commenting nature importance sub-dominant parameters.